Publications:

27) A. Giannattasio, A. Giaquinta, M. Porrini, “The accuracy of the standard resistivity-density conversion practice estimated by measuring the segregation coefficient of boron and phosphorous in Cz-silicon”, Phys. Status Solidi A 208, No. 3, 564–567 (2011).

26) A. Giannattasio, Z. Yao, E. Tarleton and S. G. Roberts, “Brittle-ductile transitions in polycrystalline tungsten”, Philosophical Magazine, vol. 90, issue 30, pp. 3947-3959 (2010)

25) J. D. Murphy, A. Giannattasio, Z. Yao, C. J. D. Hetherington, P. D. Nellist and S. G. Roberts, “The mechanical properties of tungsten grown by chemical vapour deposition”, J. Nucl. Mater. , 386, 583 (2009).

24) A. Giannattasio, M. Tanaka, T. Joseph and S. G. Roberts, “The empirical correlation between temperature and activation energy for brittle-to-ductile transition in single-phase materials”, Physica Scripta, T128, 87 (2007).

23) A. Giannattasio, S. G. Roberts, "Strain rate effect on the Brittle-to-Ductile Transition Temperature in Tungsten", Philosophical Magazine, 87, 2589 (2007).

22) C. R. Alpass, J. D. Murphy, A. Giannattasio, S. Senkader, R. J. Falster, P. R. Wilshaw, "Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking", Physica Status Solidi (a), 204, 2256 (2007).

21) S. Wedge, A. Giannattasio and W.L. Barnes, "Surface plasmon–polariton mediated emission of light from top-emitting organic light-emitting diode type structures", Organic Electronics, 8, 136 (2007).

20) J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, D. Emiroglu, J.H. Evans-Freeman, R.J. Falster, P.R.Wilshaw, “Nitrogen-doped Silicon: Mechanical, Transport and Electrical Properties”, ECS Transactions, 3, 239 (2006).

19) J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw, “Nitrogen in silicon: transport and mechanical properties”, Nucl. Instrum. Methods B, 253, 113 (2006).

18) A. Giannattasio, I. R. Hooper, W. L. Barnes, “Dependence on surface profile in grating-assisted coupling of light to surface plasmon-polaritons”, Optics Communications, 261, 291 (2006).

17) A. Giannattasio, S. Wedge, W. L. Barnes, “Role of surface profiles in surface plasmon-polariton-mediated emission of light through a metal film”, Journal of Modern Optics, 53, 429 (2006).

16) J.D. Murphy, A. Giannattasio, C.R. Alpass, S. Senkader, R.J. Falster and P.R. Wilshaw, “The influence of nitrogen on dislocation locking in float-zone silicon”, Solid State Phenomena, 108-109, 139 (2005).

15) A. Giannattasio, S. Wedge, L. H. Smith and W. L. Barnes, “The emission of light through thin metal films via surface plasmon-polaritons”, Proceedings of SPIE Volume: 5840, Photonic Materials, Devices, and Applications, (Editor: Gonçal Badenes, SPIE—The International Society for Optical Engineering, 2005), p. 353. 

14) A. Giannattasio and W. L. Barnes, “Direct observation of surface plasmon-polariton dispersion”, Optics Express, 13, 428 (2005).

13) A. Giannattasio, D.J. Murphy, S. Senkader, R. J. Falster, and P. R. Wilshaw, “Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments”, The Journal of The Electrochemical Society, 152, G460 (2005).

12) A. Giannattasio, I. R. Hooper, and W. L. Barnes, “Transmission of light through thin silver films via surface plasmon-polaritons”, Optics Express, 12, 5881 (2004).

11) J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster and P.R. Wilshaw, “Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments”, Phys. Stat. Sol. (a), 202, 926 (2005).

10) A. Giannattasio, D.J. Murphy, S. Senkader, R. J. Falster, and P. R. Wilshaw, “Impurity locking of dislocations in silicon”, in High Purity Silicon VIII, edited by C. Claeys, M. Watanabe, R. Falster, and P. Stallhofer, (The Electrochemical Society Inc., Pennington, USA, 2004)

9) A. Giannattasio, S. Senkader, R. J. Falster, and P. R. Wilshaw, "Dislocation locking by nitrogen impurities in FZ-silicon", Physica B, 340-342, 996 (2003)

8) S. Senkader, A. Giannattasio, R. J. Falster, and P. R. Wilshaw, "Dislocation locking in silicon by oxygen and oxygen transport at low temperatures", Solid State Phenomena, 95/96, 43 (2003).

7) A. Giannattasio, S. Senkader, S. Azam, R. J. Falster, and P. R. Wilshaw, "The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers", Microelectronic Engineering, 70, 125 (2003).

6) S. Senkader, A. Giannattasio, R. J. Falster, and P. R. Wilshaw, "Dislocation locking by oxygen in silicon: new insights to oxygen diffusion at low temperatures", in High Purity Silicon VII, edited by C. L. Claeys, M. Watanabe, P. Rai-Choudhury, and P. Stallhofer, (The Electrochemical Society Inc., Pennington, USA, 2002),  p.171.

5) A. Giannattasio, S. Senkader, R. J. Falster, and P. R. Wilshaw, "Generation of dislocation glide loops in Czochralski silicon", J. Phys.: Condens. Matter, 14, 12981 (2002).

4) S. Senkader, A. Giannattasio, R. J. Falster, and P. R. Wilshaw, "On the dislocation-oxygen interactions in Cz-Si: Oxygen diffusion and binding at low temperatures", J. Phys.: Condens. Matter, 14, 13141 (2002).

3) A. Giannattasio, S. Senkader, R. J. Falster, and P. R. Wilshaw, "The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon", Computational Materials Science, 30, 131 (2004).

2) M. Caria, L. Barberini, S. Cadeddu, A. Giannattasio, A. Rusani, A. Sesselego, A. Lai, S. D'Auria, and F. Dubecky, "Gallium arsenide photodetectors for imaging in the far ultraviolet region", Appl. Phys. Lett., 81, 1506 (2002).

1) M. Caria, L. Barberini, S. Cadeddu, A. Giannattasio, A. Lai, A. Rusani, A. Sesselego, "Far UV responsivity of commercial Silicon photodetectors", Nucl. Instr.meth. A, 466, 115 (2001).